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Bridge Type Rectifier Diode 1N4007 50 to 1000 Volts 1.0 Ampere

1N4007

Description

Bridge Type Rectifier Diode 1N4007 50 to 1000 Volts 1.0 Ampere

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Feature

Low coat construction

Low forward voltage drop

Low reverse leakageHigh forward surge current capability

High temperature soldering guaranteed:

260℃/10 secods/.375”(9.5mm)lead length at 5 lbs(2.3kg) tension

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MECHANICAL DATA

Case: Transfer molded plastic

poxy: UL94V-O rate flame retardant

Polarity: Color band denotes cathode end

Lead: Plated axial lead, solderable per MIL-STD-202E method 208C

Mounting position: Any

Weight: 0.012 ounce, 0.33 grams

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MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

· Ratings at 25OC ambient temperature unless otherwise specified · Single Phase, half wave, 60Hz, resistive or inductive load · For capacitive load derate current by 20%

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Maximum RMS Voltage | SYMBOLS | 1N4001 | 1N4002 | 1N4003 | 1N4004 | 1N4005 | 1N4006 | 1N4007 | UNIT |
Maximum DC Blocking Voltage | Vrrm | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
Maximum Average Forward Rectified Current 0.375”(9.5mm) lead length at TA= 25℃ | Vrms | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
Peak Forward Surge Current 8.3mS single half sine wave superimposed on rated load (JEDEC method) | VDC | 50 | 100 | 200 | 400 | 600 | 800 | 100 | V |
Maximum Instantaneous Forward Voltage @ 1.0A | (Av) | 1.0 | A |
Maximum DC Reverse ??TA = 25℃ Current at Rated ? ? ?? ? ? ? ? ? ? ? DC Blocking ? ? ? ? ? ? ? ? ?TA=100V? Voltage per element? | Ifsm | 5.0 | μA |
Vf | 50 | μA |
Maximum Full Load Reverse Current, full cycle average 0.375”(9.5mm)lead length at TL=75℃ | ? ? ? Ir | ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ?30 | ? ?μA |
Typical Junction Capacitance (Note 1) | ? ? ?Cj | ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 13 | ? ?μA |
Typical Thermal Resistance (Note 2) | ? ?RθJA | ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ?50 | ??℃ /w |
Operating Junction Temperature Range | ? ? ?Tj | ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ?-55 to +150 | ? ?℃ |
Storage Temperature Range | TSTG | -55 to +150 | ? ?℃ |
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Notes:

1. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.

2. Thermal Resistance from junction to terminal 6.0mm2 copper pads to each terminal.

3. The chip size is 40mil×40mil

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Shenzhen, Guangdong
China, 518000

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