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Hall Effect System

Hall Effect System

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Description

1. Function
Measurement of Hall Effect and magnetic resistance, curves of I-V and R-T.
Parameters to be measured:
Hall Effect- sheet resistance, resistivity, Hall coefficient, conductivity type, Hall mobility, carrier concentration;
Magnetic resistance effect:
I-V curve: I-V curves at different temperature and magnetic field.
R-T curve: Under different magnetic field, the curves for resistance changes with temperature.

2. Material to be measured:
Semiconductor materials: Si, Ge, AlGaAs, GaAs, GaN, HgCdTe, CdTe, etc.
Low impedance materials: metals, transparent oxides, weak magnetic semiconductor materials, TMR materials.
Ferrite.

3. Technical Details:
Magnetic field range: 1.7T (pole spacing 22mm) 1.1T (pole spacing 40mm)
Resistance range: 1mΩ ~ 10MΩ
Carrier concentration: 106 ~ 1019cm3
Migration rate: 100 ~ 105cm2/Vs
Systematic measurement errors: <2%
Measurents from room temperaure (300K) to 77K (LN2).

4. Features:
1). Real-time closed-loop control system using magnetic fields, can provide high stability of the magnetic field, the user can freely change the magnetic field required for testing;
2). Test samples in the low-temperature nitrogen atmosphere, the sample temperature and the temperature of the gas exchange is the same, there is no heat transfer due to measurement errors caused by temperature and temperature gradient effects within the sample;
3). Quick and easy replacement of the sample to improve the testing efficiency;
4). Automated testing software, can achieve a constant magnetic field variable-temperature automatic testing, automatic constant temperature, magnetic field test, or variable-temperature magnetic field of automated testing, variable-temperature magnetic field of automated testing is a more complete and comprehensive testing;

5. Electrode contacts: 4 or 6

6. Temperature environment:
The standard variable-temperature system with no option but to carry out measurements at room temperature.
Liquid nitrogen Dewar or re

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