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High Temperature Memory With Large Density

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LHNF1GA High temperature memoryIntroduction LHNF1GA is a high temperature and reliable NAND type and commonly used memory, with fast read and write, high reliability characteristics under high and low temperature and can operate continuously under severe environment of -45℃~175℃.?Product model Voltage scope Structure Encapsulation LHNF1GA 2.7V~3.6V 1G x 8 bit DIP16 Characteristics Working temperature scope: -45℃~+175℃
?The maximum working current: 90mA; standby current: <2mA
?Power supply voltage Vcc (V): 2.7V~3.6V
?Input high level (V): 0.8Vcc~Vcc+0.3
?Input low level (V): -0.3~0.2Vcc
?Output high level (V):2.4~Vcc
?Output low level (V): -0.3~0.4
?Encapsulation: 16 PIN DIP lead-free encapsulation (45mm x 28mm x 5mm)Pin configurationPin description Pin name Pin function IO0 ~?IO7 Multiplexing I/O Input order, address, input and output data; When chip is not selected or output is invalid, I/O pin is at high impedance state; CLE Command latch enable Enable command is conveyed to register. When CLE is at high level, rising edge of signal, and command through IO port stored into the register.ALE Address latch enable Valid path from enable address to command register. When ALE is at high level, address is latched at the rising edge of.C(—)E(—)Chip enable Component selects control signal. When component is at busy state, high level of C(—)E(—)?is ignored; and the component will not return to waiting mode when doing programming or erase operation.R(—)E(—)Read Enable Enable read allows the output of serial data. When the signal is at low level, data is driven to IO port. Data at the falling edge will be valid after R(—)E(—)?, and address calculator of internal serial will be increased by 1 automatically.W(—)E(—)Write enable W(—)E(—)?inputs write enable to control the input of serial data; Command, address and data latching at the rising edge of W(—)E(—). ??R/B(—)Ready/Busy output R/B(—)?output is used to indicate the operation state of component. When it is

High Temperature Memory With Large Density, High Temperature Flash Memory 4Gb,

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Qingdao HNYN Microelectronics Co., Ltd

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Address: A3 Buliding, No.1 Jinye Road, National High-tech Industrial Development Zone, Qingdao,
Qingdao, Shandong
China, 266114

Tel: 86-532-68013909
Fax: 86-532-58717256

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